High-Speed InP Photodiodes
Origin: USA
High-speed photodiodes engineered to meet the demanding requirements of longwave fiber-optic communications systems.
Designed for use in the next generation of 800G and 1.6T transceivers with 200 Gb/s PAM4 optical lanes, the high-speed photodiodes provide major advancements in reliability and performance for data center applications.
Key Features
- Available in singlet configuration and 1x4 arrays with integrated lenses
- Efficient optical coupling and compatibility with all major 4-channel and 8-channel transimpedance amplifiers (TIA)
- Wide optical response from 900 nm to 1650 nm and high responsivity at 1310 nm
- 3 dB bandwidth greater than 50 GHz
- Low capacitance of 50 femtofarads (fF)
- Low dark current
- RoHS compliant
- Available in flip-chip bonded pad configuration for compatibility with high-performance TIA
>> Coherent networking technology
Contact infomation:
LECI Co., Ltd
R-1901, Saigon Trade Center Bld, 37 Ton Duc Thang Str., Ben Nghe W., Dist. 1, HCM City 70000, VN.
Long Bien, Ha Noi, VN.
Phone: (+84) 901442689 (WhatsApp)
Hotline: 02822202988
Website: lecilaser.com
